科研之友
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摘要
At the monolayer limit both MoS2 and the graphitic phase of ZnO have a direct band gap. Biaxial tensile strain has been found to induce a transition into an indirect band-gap semiconductor with the strain percentage required for the transition equal to 0.83% for MoS2 and 8% for ZnO, respectively. A low strain percentage is desirable for possible device applications. We identify a simple design principle which could be used to identify materials requiring a small strain to induce such a transition. A scaling of the hopping interaction strengths according to Harrison's law within a tight-binding model for MoS2 is able to capture the effect.
- 出版日期2014-3-6
