摘要
A pseudo spin-valve (PSV) using amorphous CoNbZr alloy as a soft magnetic layer and buffer layer was proposed. The giant magnetoresistance (GMR), thermal annealing effect, and the performance were investigated. Antiparallel magnetization alignments were observed in the samples with 2-4 nm CoNbZr layer and a maximum GMR of 6.5% was obtained. Furthermore, sandwich with relatively thick CoNbZr layer has a superior thermal stability to 400 degrees C and a GMR enhancement to about 9%. After patterning to 6 mu mx1 mu m elliptic stripe, a single domain forms and the dynamic MR behavior indicates the stripe has a linear and stable GMR response. Therefore, it is believed that the PSVs with amorphous CoNbZr layers have good potentials for spin-electronic devices.
- 出版日期2006-4-15
- 单位电子科技大学