Analysis and characterization of a new trench IGBT with improved layers

作者：Yang Lingling^*; Li Kaihang; Wu Dongming

来源：3rd IEEE Conference on Industrial Electronics and Applications (ICIEA 2008), 2008-06-03 to 2008-06-05.

• trench insulated gate bipolar transistor
• power device
• saturation voltage
• conductivity modulation

This paper presents a novel 2.0kV insulated gate bipolar transistor (IGBT) with trench gate structure by using an improved N-Base layer and an N-buffer layer. The new structure leads to improvement of conductivity modulation in N(-)-Base. The numerical simulations show that the collector-emitter saturation voltage [Vce(sat)] and saturation current of new device are both lower than that of conventional IGBT with trench-gate structure. The details of physical mechanisms and analysis are also given.

• 出版日期2008
• 单位厦门大学