科研之友
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摘要
In this work, the dark current behavior of the x-ray photoconductors based on CdSe crystal was investigated. The MSM planar structure was used to fabricate x-ray photoconductor with two orthogonal directions configurations which are the applied electric field parallel to the crystallographic c-axis (E//c) and perpendicular to the c-axis (E perpendicular to c), respectively. The dark current density, relaxation time, stability and electrical asymmetry for two orthogonal directions configurations have been studied. The results show that the dark current density is still below 0.2 nA cm(-2) at a high electric field of 1 x 10(3) V cm(-1), the relaxation time under various bias voltages is about 40 s, the stability of dark current is good, the electrical asymmetry that negatively biased current larger than positively biased is about one order of magnitude. In addition, the anisotropy of dark current behavior is slight. This work provides a reliable basis for x-ray detector of CdSe crystal.
