Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices

作者：Haddadi A; Adhikary S; Dehzangi A; Razeghi M

来源：Applied Physics Letters, 2016, 109(2): 021107.

DOI：10.1063/1.4958715

A mid-wavelength infrared heterojunction phototransistor based on type-II InAs/AlSb/GaSb superlattices on GaSb substrate has been demonstrated. Near a wavelength of 4 mu m saturated optical gains of 668 and 639 at 77 and 150K, respectively, are demonstrated over a wide dynamic range. At 150 K, the unity optical gain collector dark current density and DC current gain are 1 x 10(-3) A/cm(2) and 3710, respectively. This demonstrates the potential for use in high-speed applications. In addition, the phototransistor exhibits a specific detectivity value that is four times higher compared with a state-of-the-art type-II superlattice-based photodiode with a similar cut-off wavelength at 150K. Published by AIP Publishing.

• 出版日期2016-7-11
• 单位西北大学