Memory characteristics of metal-oxide-semiconductor capacitor with high density cobalt nanodots floating gate and HfO2 blocking dielectric

作者：Pei Yanli^*; Yin Chengkuan; Kojima Toshiya; Nishijima Masahiko; Fukushima Takafumi; Tanaka Tetsu; Koyanagi Mitsumasa

来源：Applied Physics Letters, 2009, 95(3): 033118.

DOI：10.1063/1.3189085

• cobalt
• electron traps
• hafnium compounds
• monolayers
• MOS capacitors
• nanostructured materials
• quantum dots
• random-access storage
• self-assembly
• transmission electron microscopy
• X-ray photoelectron spectra

In this letter, cobalt nanodots (Co-NDs) had been formed via a self-assembled nanodot deposition. High resolution transmission electron microscopy and x-ray photoelectron spectroscopy analyses clearly show that the high metallic Co-ND is crystallized with small size of similar to 2 nm and high density of (4-5)x10(12)/cm(2). The metal-oxide-semiconductor device with high density Co-NDs floating gate and high-k HfO2 blocking dielectric exhibits a wide range memory window (0-12 V) due to the charge trapping into and distrapping from Co-NDs. After 10 years retention, a large memory window of similar to 1.3 V with a low charge loss of similar to 47% was extrapolated. The relative longer data retention demonstrates the advantage of Co-NDs for nonvolatile memory application.

• 出版日期2009-7-20