A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs

作者：He Jin^*; Zhang Lining; Zhang Jian; Zheng Rui; Fu Yue; Chan Mansun

来源：IEEE International Conference on Electron Devices and Solid-State Circuits, 2007-12-20 to 2007-12-22.

• non-classical CMOS
• DG-MOSFET
• device physics
• surface potential-based model

In this paper a complete surface potential-based core model for the undoped symmetric double-gate MOSFETs is derived from a fully self-consistent coupling between the surface potential versus voltage equation from Poisson equation solution and the drain current expression from Pao-Sah's double integral The model consists of a single set of the surface potential equation and the analytic drain current in terms of the surface potential evaluated at the source and drain ends. The presented model is verified by extensive comparison with the 2-D numerical simulation for different operation regions and geometry parameters, demonstrating the model accuracy and prediction capability.

• 出版日期2007
• 单位北京大学