A CROSS-LAYER TECHNOLOGY-BASED STUDY OF HOW MEMORY ERRORS IMPACT SYSTEM RESILIENCE

作者:Kleeberger Veit B*; Gimmler Dumont Christina; Weis Christian; Herkersdorf Andreas; Mueller Gritschneder Daniel; Nassif Sani R; Schlichtmann Ulf; Wehn Norbert
来源:IEEE Micro, 2013, 33(4): 46-55.
DOI:10.1109/MM.2013.67

摘要

Highly scaled technologies at and beyond the 22-nm node are sensitive to various scaling-related problems that make integrated circuits and systems less reliable. Employing a cross-layer approach spreads the burden of ensuring resilience across multiple levels of the design hierarchy. This article illustrates a methodology for dealing with scaling-related problems via two case studies that link models of low-level technology-related problems to system behavior.

  • 出版日期2013-8