摘要

The numerical modeling of nanoscale electron devices needs the development of accurate and efficient numerical methods, in particular, for the numerical solution of the Schrodinger problem. If FEMs allow an accurate geometric representation of the device, they lead to a discrete counterpart of Schrodinger problem in terms of a computationally heavy generalized eigenvalue problem. Exploiting the geometric structure behind the Schrodinger problem, we will construct a numerically efficient discrete counterpart of it, yielding to a standard eigenvalue problem. We will also show how the two approaches are only partially akin to each other even when lumping is applied.

  • 出版日期2014-2

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