A 0.8 THz f(MAX) SiGe HBT Operating at 4.3 K

作者：Chakraborty Partha S^*; Cardoso Adilson S; Wier Brian R; Omprakash Anup P; Cressler John D; Kaynak Mehmet; Tillack Bernd

来源：IEEE Electron Device Letters, 2014, 35(2): 151-153.

DOI：10.1109/LED.2013.2295214

• Cryogenic
• SiGe HBT
• terahertz
• BiCMOS

We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak f(MAX) of 798 GHz (peak f(T) of 479 GHz) at 4.3 K was measured for a device with a BVCEO of 1.67 V. This scaled SiGe HBT also exhibits excellent thermal properties, as required from an electro-thermal reliability perspective. Taken together, these results strongly suggest that at the limits of scaling, robust, and manufacturable SiGe HBTs designed for room temperature operation are likely to achieve THz speeds.

• 出版日期2014-2