Epitaxial Growth of a Single-Domain Hexagonal Boron Nitride Mono layer

作者：Orlando Fabrizio; Lacovig Paolo; Omiciuolo Luca; Apostol Nicoleta G; Larciprete Rosanna; Baraldi Alessandro; Lizzit Silvano^*

来源：ACS Nano, 2014, 8(12): 12063-12070.

DOI：10.1021/nn5058968

• hexagonal boron nitride
• Ir(111)
• chemical vapor deposition
• temperature-programmed growth
• X-ray photoelectron diffraction

We investigate the structure of epitaxially grown hexagonal boron nitride (h-BN) on Ir(111) by chemical vapor deposition of borazine. Using photoelectron diffraction spectroscopy, we unambiguously show that a single-domain h-BN monolayer can be synthesized by a cyclic dose of high-purity borazine onto the metal substrate at room temperature followed by annealing at T = 1270 K, this method giving rise to a diffraction pattern with 3-fold symmetry. In contrast, high-temperature borazine deposition (T = 1070 K) results in a h-BN monolayer formed by domains with opposite orientation and characterized by a 6-fold symmetric diffraction pattern. We identify the thermal energy and the binding energy difference between fcc and hcp seeds as key parameters in controlling the alignment of the growing h-BN clusters during the first stage of the growth, and we further propose structural models for the h-BN monolayer on the Ir(111) surface.

• 出版日期2014-12