Design of Temperature-Aware Low-Voltage 8T SRAM in SOI Technology for High-Temperature Operation (25 degrees C-300 degrees C)

作者：Ngoc Le Ba^*; Kim Tony Tae Hyoung

来源：IEEE Transactions on Very Large Scale Integration Systems, 2017, 25(8): 2383-2387.

DOI：10.1109/TVLSI.2017.2686600

• Forward body bias (FBB)
• high-temperature electronics (HTEs)
• silicon on insulator (SOI)
• static random access memory (SRAM)

A temperature-aware low-voltage 8T static random access memory (SRAM) for high-temperature operations is presented. A dedicated read port with virtual ground and optimal body bias improves sensing margin under very high temperature (up to 300 degrees C). Bitline offset voltage for data "0" caused by the virtual ground scheme is also compensated by a replica bitline. The independent body bias control feature of the employed silicon-on-insulator (SOI) technology allows the write margin to be enhanced significantly without using any write-assist circuitry. Test chips were fabricated in a 1-mu m SOI technology with tungsten interconnect for reliability at high temperature and lesser process variation. Measurement results demonstrate that the proposed SRAM operates successfully up to 300 degrees C with the supply voltage range of 2-5 V. At the minimum performance variation point (V-DD = 2.5 V), the SRAM consumes 1.48 mW and shows the access time of 156 ns and the maximum clock frequency of 14.38 MHz at 300 degrees C.

• 出版日期2017-8
• 单位南阳理工学院