Nb5N6 thin film on silicon and silicon oxide: A good material for terahertz detection

作者：Lu XueHui; He Ning; Kang Lin^*; Chen Jian; Jin BiaoBing; Wu PeiHeng

来源：Chinese Science Bulletin, 2009, 54(18): 3344-3346.

DOI：10.1007/s11434-009-0485-8

• Nb5N6 thin solid films
• temperature coefficient of resistance (TCR)
• terahertz detection
• thermometer

Voltage responsivity of bolometer will benefit from high temperature coefficient of resistance (TCR) of the material. The Nb5N6 thin solid films we proposed in this paper have high TCR, compared with the commonly-used materials such as Nb and Bi. The films were sputtered on Si(100), SiO2/Si(100), SiO2 substrates by using radio frequency (r (f)) magnetron sputtering. The deposition conditions have been optimized to get high TCR. The highest TCR is over 0.91% K-1 at 300 K and up to 4.5% K-1-7% K-1 at 78 K, which is good enough to be used in terahertz detection and thermometer fabrication in the range from 78 K to 300 K.

• 出版日期2009-9
• 单位南京大学