Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxide Thin Films

作者：Tamm Aile^*; Kemell Marianna; Kozlova Jekaterina; Sajavaara Timo; Tallarida Massimo; Kukli Kaupo; Sammelselg Vaeino; Ritala Mikko; Leskela Markku

来源：Journal of the Electrochemical Society, 2010, 157(10): G193-G201.

DOI：10.1149/1.3467843

ZrO(2) films doped with Er(2)O(3) were grown by atomic layer deposition from tris(2,2,6,6-tetramethyl-3,5-heptanedionato)erbium, bis(methylcyclopentadienyl)methoxymethylzirconium, and ozone as precursors at 350 degrees C. The erbium content was 1-5 cation %. The films were uniform in thickness. The ZrO(2):Er(2)O(3) films were crystallized already in the as-deposited state. Upon annealing at 650 degrees C, they were stabilized in the form of cubic or tetragonal polymorph of ZrO(2). Enhancement in capacitance required intense crystallization that was observed when the film thickness exceeded 4.4 nm. The permittivity of the ZrO(2):Er(2)O(3) films could reach 31. The capacitors based on the doped ZrO(2) possessed lower capacitance equivalent oxide thickness compared to the nondoped ZrO(2) and also comparable leakage current densities.

• 出版日期2010