Dip-coating synthesis of P-doped BiVO4 photoanodes with enhanced photoelectrochemical performance

作者：Xia, Teng; Chen, Min; Xiao, Lisong; Fan, Weiqiang; Mao, Baodong; Xu, Dongbo; Guan, Peng; Zhu, Jianjun; Shi, Weidong^*

来源：Journal of the Taiwan Institute of Chemical Engineers, 2018, 93: 582-589.

DOI：10.1016/j.jtice.2018.09.003

• Photoelectrochemical
• Bismuth vanadate
• Phosphor doping
• Dip-coating

The application of bismuth vanadate for photoelectrochemical water splitting is limited by the insufficient charge separation and transport characteristics. In this work, phosphorus doped BiVO4 (P-BiVO4) photoanodes were fabricated through dip-coating method and subsequent thermal treatment process. The optimized 2% P-BiVO4 exhibited a photocurrent density up to 0.28 mA/cm(2) at 1.23 V versus reversible hydrogen electrode in 0.5 M Na2SO4 electrolyte (AM 1.5 G, 100 mW/cm(2)). The incident photon-to-current efficiency of 2% P-BiVO4 was boosted to 33%, which was significantly higher than the pristine BiVO4 photoanode. The X-ray photoelectron spectra indicate that the P-BiVO4 possessed abundant oxygen vacancies, which can account for enhancing PEC performance of P-BiVO4. The electrochemical impedance spectroscopy and Mott-Schottky results further show that P-BiVO4 possess less interface obstruction and high carrier concentration, which were beneficial for the improvement of photoelectrochemical performance. This work provides a useful guidance for the design of non-metal doped BiVO4 photoanodes for energy conversion.

• 出版日期2018-12
• 单位江苏大学