Simulation of a spin field effect transistor based on magnetic impurity-doped ZnO

作者：Thankalekshmi Ratheesh R; Rastogi A C^*

来源：Journal of Applied Physics, 2012, 111(7): 07D104.

DOI：10.1063/1.3671790

This paper theoretically analyzes and simulates the conductance modulation of the electron channel of a spin-FET in terms of the variation in polarized spin density in response to the gate voltage. Spin-switched change in the channel charge has been modeled theoretically and is correlated with the channel conductance. Simulation studies establish the range of channel parameters, spin modulation relative to the sensor, the electron mobility, and doping concentration for the spin-switched changes in the electron channel conductance.

• 出版日期2012-4-1