摘要

The SPURT. CRIS code has been used for computer simulation of the Ti+ ions implantation in the Nb nanostructured film at low temperatures. The distributions of Ti+ implanted ions were generated and analyzed depending on both the ion energy (E-ion) and irradiation angle (alpha). The ion energy and irradiation angle were varied in the range from 0.5 to 2.0 keV and from 0 degrees to 80 degrees, respectively. The maximal depths of the Ti+ implanted ions were evaluated using the generated distributions. It was shown that the maximal depth of Ti+ implanted ions in the Nb film is realized at the definite range of irradiation angles. This effect allows optimizing the process of film layers formation with the predetermined properties.

  • 出版日期2014