科研之友
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摘要
A new electron trap state SD was found by DLTS measurement under light illumination in Si doped A.lxGa1-xAs. This new trap energy level ESD is shallower than the DX center energy in the gap and the concentration of SD is comparable to that of DX centers. The emission activation energy Ec=0.20±0.05eV...
- 出版日期1989
- 单位中国科学院大学; 中国科学院半导体研究所
