A Phenomenological Model for the Quantum Capacitance of Mono layer and Bilayer Graphene Devices

作者：Kliros George S^*

来源：Romanian Journal of Information Science and Technology, 2010, 13(4): 332-341.

• Graphene
• Bilayer
• Density of States
• Quantum Capacitance
• Electron-hole puddles

Graphene nanostructures exhibit an intrinsic advantage in relation to the gate delay in three-terminal devices and provide additional benefits when operate in the quantum capacitance limit. In this paper, we developed a simple model that captures the Fermi energy and temperature dependence of the quantum capacitance for monolayer and bilayer graphene devices. Quantum capacitance is calculated from the broadened density of states taking into account electron-hole puddles and possible finite lifetime of electronic states through a Gaussian broadening distribution. The obtained results are in agreement with many features recently observed in quantum capacitance measurements on both gated monolayer and bilayer graphene devices. The temperature dependence of the minimum quantum capacitance around the charge neutrality point is also investigated.

• 出版日期2010