Unidirectional oxide hetero-interface thin-film diode

作者：Park Youngmin^*; Lee Eungkyu; Lee Jinwon; Lim Keon Hee; Kim Youn Sang

来源：Applied Physics Letters, 2015, 107(14): 143506.

DOI：10.1063/1.4932069

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of similar to 10(5) at 5V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10(2) Hz<f<10(6) Hz, providing a high feasibility for practical applications.

• 出版日期2015-10-5