A study on the aluminum fire-through to a-SiNx:H thin film for crystalline solar cells

作者：Song Jooyong; Park Sungeun; Kwon Soonwoo; Kim Sungtak; Kim Hyunho; Tark Sung Ju; Yoon Sewang; Kim Donghwan^*

来源：Current Applied Physics, 2012, 12(1): 313-318.

DOI：10.1016/j.cap.2011.06.028

• Aluminum
• Silicon nitride
• Local contact
• Rear passivation
• Back surface field
• Solar cell

The relationship between aluminum fire-through and the properties of a-SiNx:H thin films was investigated to aid their use as dielectric layers in rear side and front passivation layers in crystalline solar cells. Aluminum fire-through was shown to depend on the refractive index and the deposition rate of the films. %26lt;br%26gt;Refractive index, density and deposition rate increased with increasing SiH4/NH3 ratio, while the etching rate decreased. Aluminum fire-through occurred in a sample of refractive index 2.0 during fast deposition but not when the deposition rate was slow. Aluminum fire-through occurred during extended firing, despite it not occurring during normal firing by RTP. The results of this work demonstrate that refractive index was the major determinant of aluminum fire-through, and that the aluminum and the a-SiNx:H thin film reacted immediately at the beginning of firing at a rate determined by the deposition rate.

• 出版日期2012-1