Systematic study of shallow junction formation on germanium substrates

作者：Hellings Geert^*; Rosseel Erik; Clarysse Trudo; Petersen Dirch Hjorth; Hansen Ole; Nielsen Peter Folmer; Simoen Eddy; Eneman Geert; De Jaeger Brice; Hoffmann Thomas; De Meyer Kristin; Vandervorst Wilfried

来源：Microelectronic Engineering, 2011, 88(4): 347-350.

DOI：10.1016/j.mee.2010.11.014

• Ultra Shallow Junction
• Germanium
• Boron
• Arsenic
• Mobility
• Sheet Resistance

Published results on Ge junctions are benchmarked systematically using R(s)-X(j) plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting B junctions with F is shown to degrade junction properties.

• 出版日期2011-4