A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus

作者：Carrillo Nunez H^*; Magnus Wim; Peeters F M

来源：Journal of Applied Physics, 2010, 108(6): 063708.

DOI：10.1063/1.3476297

• ballistic transport
• Boltzmann equation
• current density
• density functional theory
• elemental semiconductors
• MOSFET
• nanowires
• Poisson equation
• Schrodinger equation
• semiconductor quantum wires
• silicon
• variational techniques

A simplified quantum mechanical model is developed to investigate quantum transport features such as the electron concentration and the current flowing through a silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET). In particular, the electron concentration is extracted from a self-consistent solution of the Schroumldinger and Poisson equations as well as the ballistic Boltzmann equation which have been solved by exploiting a nonlinear variational principle within the framework of the generalized local density approximation. A suitable action functional has been minimized and details of the implementation and its numerical minimization are given. The current density and its related current-voltage characteristics are calculated from the one-dimensional ballistic steady-state Boltzmann transport equation which is solved analytically by using the method of characteristic curves. The straightforward implementation, the computational speed and the good qualitative behavior of the transport characteristics observed in our approach make it a promising simulation method for modeling quantum transport in nanowire MOSFETs.

• 出版日期2010-9-15