A novel 4H-SiC MESFET with double upper gate and recessed p-buffer

作者：Jia, Hujun; Ma, Peimiao^*; Luo, Yehui; Yang, Zhihui; Wang, Zhijiao; Wu, Qiuyuan; Hu, Mei

来源：Superlattices and Microstructures, 2016, 97: 346-352.

DOI：10.1016/j.spmi.2016.06.037

• 4H-SiC MESFET
• Double upper gate
• Recessed p-buffer
• Drain current
• Gate-source capacitance

A novel structure named 4H-SiC metal semiconductor field effect transistor with double upper gate and recessed p-buffer (DURP MESFET) is proposed and simulated in this paper. The increase in the saturation drain current and the breakdown voltage, and the decrease in the gate-source capacitance are achieved compared with those of DR MESFET, which are result from the reduction of the depletion region under the gate by the introduction of a double upper gate. The negative influence of the double upper gate on trans-conductance is suppressed by employing a recessed p-buffer. With the optimal size, the height of the upper gate Z = 0.10 mu m, the depth and width of the recessed p-buffer of 0.05 mu m and 0.35 mu m, superior DC and RF characteristics for the proposed structure can be obtained, such as a 22.5% increase in the saturation drain current and a 17.9% increase in the breakdown voltage compared to the DR MESFET. The gate-source capacitance is 0.439 pF/mm compared to 0.573 pF/mm of DR MESFET by reference to simulated results, which would lead to the DURP MESFET has excellent RF performance.

• 出版日期2016-9
• 单位西安电子科技大学