MRAM applications using unlimited write endurance

作者:Sugibayashi Tadahiko*; Honda Takeshi; Sakimura Noboru; Tahara Shuichi; Kasai Naoki
来源:IEICE - Transactions on Electronics, 2007, E90C(10): 1936-1940.
DOI:10.1093/ietele/e90-c.10.1936

摘要

Apart from magnetic random access memories (MRAM), nonvolatile memories cannot be used without causing fatigue. As the use of MRAMs can solve fatigue problems, MRAMs have a large potential to open up large new markets. The manufacturing cost of LSIs cannot be reduced while they have not been produced massively. To increase the size of the MRAM market, new applications, in which MRAMs create added value, are needed. A demo system that models a drive recorder was developed to introduce the novel features of MRAMs, and a 4-Mb MRAM was developed to be used in the demo system.

  • 出版日期2007-10

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