Nonvolatile Tri-State Resistive Memory Behavior of a Stable Pyrene-Fused N-Heteroacene with Ten Linearly-Annulated Rings

作者:Li, Yang; Zhang, Cheng; Gu, Peiyang; Wang, Zilong; Li, Zhengqiang; Li, Hua*; Lu, Jianmei*; Zhang, Qichun*
来源:Chemistry - A European Journal, 2018, 24(31): 7845-7851.
DOI:10.1002/chem.201801146

摘要

The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibited excellent tri-state resistive memory property, which held great promise to achieve ultrahigh-density data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large N-heteroacene (n >= 10), which provides guidelines for designing more proof-of-concept larger N-heteroacene-based memory electronics.