Achieving reproducibility needed for manufacturing semiconductor tunnel devices

作者:Shao C*; Sexton J; Missous M; Kelly M J
来源:Electronics Letters, 2013, 49(10): 674-U74.
DOI:10.1049/el.2013.0782

摘要

Fifty years after tunnelling through semiconductor heterojunctions was originally investigated, the present authors are the first to demonstrate the required reproducibility, in wafer, between wafers in a given growth run, and from run to run, of the electrical properties required for manufacturing a microwave and millimetre-wave detector based on electron tunnelling through a thin semiconductor tunnel barrier layer.

  • 出版日期2013-5-9