Magnetoelectric switching of exchange bias

作者:Borisov P*; Hochstrat A; Chen X; Kleemann W; Binek C
来源:Physical Review Letters, 2005, 94(11): 117203.
DOI:10.1103/PhysRevLett.94.117203

摘要

The perpendicular exchange bias field, H-EB, of the magnetoelectric heterostructure Cr2O3 (111)/ (Co/Pt)(3) changes sign after field cooling to below the Neel temperature of Cr2O3 in either parallel or antiparallel axial magnetic and electric freezing fields. The switching of H-EB is explained by magnetoelectrically induced antiferromagnetic single domains which extend to the interface, where the direction of their end spins controls the sign of H-EB. Novel applications in magnetoelectronic devices seem possible.

  • 出版日期2005-3-25