Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

作者：Raja Jayapal; Jang Kyungsoo; Balaji Nagarajan; Choi Woojin; Thanh Thuy Trinh; Yi Junsin^*

来源：Applied Physics Letters, 2013, 102(8): 083505.

DOI：10.1063/1.4793535

Stability of negative bias temperature stress (NBTS) of nitrogen doped amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) is investigated. Undoped a-IGZO TFT stressed at 333K exhibit a larger negative Delta V-TH (-3.21 V) with an unpredictable sub-threshold swing (SS) of hump shaped transfer curve due to the creation of meta-stable traps. Defects related hump formation has disappeared with small Delta V-TH (-1.13 V) and Delta SS (0.018 V/dec) in nitrogen doped a-IGZO TFT. It is observed that nitrogen doping enhances device stability by well controlled oxygen vacancy and trap sites in channel and channel/dielectric interface.

• 出版日期2013-2-25