A Cavity Chip Interconnection Technology for Thick MEMS Chip Integration in MEMS-LSI Multichip Module

作者：Lee Kang Wook^*; Kanno Soichiro; Kiyoyama Kouji; Fukushima Takafumi; Tanaka Tetsu; Koyanagi Mitsumasa

来源：Journal of Microelectromechanical Systems, 2010, 19(6): 1284-1291.

DOI：10.1109/JMEMS.2010.2082497

• Beam lead
• cavity chip
• heterogeneous integration
• microelectromechanical systems (MEMS) large-scale integration (LSI) (MEMS-LSI) multichip module
• sidewall interconnection
• through-silicon via (TSV)

We develop a cavity chip interconnection technology for thick microelectromechanical systems (MEMS) chip integration. The cavity chip comprising Cu through-silicon via and Cu beam-lead wire was fabricated by micromachining processes. The cavity chip could easily connect a thick MEMS chip with a high step height of more than a few hundred micrometers without changing the circuit design of MEMS chip and complicated extra process. Fundamental characteristics are successfully obtained from a pressure-sensing MEMS chip of 360-mu m thickness, where the MEMS chip was connected to a Si substrate by the cavity chip without degrading brittle sensing elements. This interconnection technology would provide a good solution for thick MEMS chip integration with high flexibility.

• 出版日期2010-12