Morphology evolution of (331) A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE)

作者：Niu Zhi Hong^*; Ren Zheng Wei; He Zhen Hong

来源：Acta Photonica Sinica, 2008, 37(6): 1107-1111.

• Atomic Force Microscope (AFM)
• Atomic hydrogen
• High-index surfaces
• Layer thicknesses
• Molecular beam epitaxy (MBE)
• Monotonically
• Morphology evolution
• Nanowires (NW)
• Optical (PET) (OPET)
• Photoluminescence (PL) measurements
• Polarization properties
• Self aligned (SA)
• Substrate temperature (ST)
• Surface migration
• Terrace width

Step like morphology of (331) A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of GaAs layers increase monotonically with increasing substrate temperatures. The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates. And, in atomic hydrogen assisted MBE, the terrace width reduces and density increases when depositing the same amount of GaAs. It attributes this to the reduced surface migration length of Ga adatoms with atomic hydrogen. Laterally ordered InAs self-aligned nano-wires were grown on GaAs (331) A surfaces and its optical polarization properties were revealed by photoluminescence measurements.

• 出版日期2008