Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy

作者：Hsu Chao Wei^*; Chen Yung Feng; Su Yan Kuin

来源：Nanoscale Research Letters, 2012, 7: 642.

DOI：10.1186/1556-276X-7-642

• Threading dislocations
• Metal-organic vapor-phase epitaxy
• InAs
• Nanofins

InAs nanofins were prepared on a nanopatterned Si (001) substrate by metal-organic vapor-phase epitaxy. The threading dislocations, stacked on the lowest-energy-facet plane {111}, move along the SiO2 walls, resulting in a dislocation reduction, as confirmed by transmission electron microscopy. The dislocations were trapped within a thin InAs epilayer. The obtained 90-nm-wide InAs nanofins with an almost etching-pit-free surface do not require complex intermediate-layer epitaxial growth processes and large thickness typically required for conventional epitaxial growth.

• 出版日期2012-11-23