A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs

作者：Lime Francois^*; Avila Herrera Fernando; Cerdeira Antonio; Iniguez Benjamin

来源：Solid-State Electronics, 2017, 131: 24-29.

DOI：10.1016/j.sse.2017.02.004

• Gate-All-Around
• Cylindrical
• MOSFET
• Junctionless
• Drain current
• Compact model
• Short channel

In this paper we provide solutions to update a long channel model in order to take into account the short channel effects. The presented model is for the junctionless GAA MOSFETs. The resulting model is analytical, explicit and valid for depletion and accumulation regimes, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good.

• 出版日期2017-5