Activating Carrier Multiplication in PbSe Quantum Dot Solids by Infilling with Atomic Layer Deposition

作者：ten Cate Sybren; Liu Yao; Sandeep C S Suchand; Kinge Sachin; Houtepen Arjan J; Savenije Tom J; Schins Juleon M; Law Matt; Siebbeles Laurens D A^*

来源：Journal of Physical Chemistry Letters, 2013, 4(11): 1766-1770.

DOI：10.1021/jz4007492

Carrier multiplication-the generation of multiple electron-hole pairs by a single photon-is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.

• 出版日期2013-6-6