Doping induced modifications in the electronic structure and magnetism of ZnO films: Valence band and conduction band studies

作者：Katba Sayan; Jethva Sadaf; Udeshi Malay; Trivedi Priyanka; Vagadia Megha; Shukla D K; Choudhary R J; Phase D M; Kuberkar D G^*

来源：Applied Surface Science, 2017, 423: 100-110.

DOI：10.1016/j.apsusc.2017.06.139

• ZnO
• Diluted magnetic semiconductor
• Photoelectron spectroscopy
• Valence band spectroscopy
• X-ray absorption spectroscopy

The electronic structure of Pulsed Laser Deposited (PLD) ZnO, Zn0.95Fe0.05O (ZFO), Zn0.98Al0.02O (ZAO) and Zn0.93Fe0.05Al0.02O (ZFAO) films were investigated by Photoelectron spectroscopy and X-ray absorption spectroscopy. X-ray diffraction and phi-scan measurements show epitaxial c-directional growth of the films. Temperature dependent magnetization and M-H loop measurements show the presence of room temperature magnetic ordering in all the films. Fittings of Fe 2p XPS and Fe L-3,L-2-edge XAS of ZFO and ZFAO films show the presence of Fe, in both, Fe+2 and Fe+3 states in tetrahedral symmetry. Valence band spectra in resonance mode show resonance photon energy at 56 eV showing the presence of Fe2+ state (similar to 2 eV) near the Fermi level. A significant effect of Fe and Al doping on the spectral shape of O K-edge XAS was observed. Results of the Spectroscopic studies reveal that, ferromagnetism in the films is due to the contribution of oxygen deficiency which increases the number of charge carriers that take part in the exchange interaction. Al co-doping with Fe (in ZFAO) results in the enhancement of saturation magnetization by increase in the carrier-mediated ferromagnetic exchange interaction.

• 出版日期2017-11-30