Novel devices and process for 32 nm CMOS technology and beyond

作者：Wang YangYuan^*; Zhang Xing; Liu XiaoYan; Huang Ru

来源：Science in China - Series F: Information Sciences , 2008, 51(6): 743-755.

DOI：10.1007/s11432-008-0071-8

• CMOS technology
• high-k
• metal gate
• non-planar MOSFET
• quasi-ballistic transport

The development of next 32 nm generation and below needs innovations on not only device structures, but also fabrication techniques and material selections. Among those promising technologies, new gate structures as high-k gate dielectric and metal gate, strain channel carrier mobility enhancement technology, and novel non-planar MOSFET structures are all possible candidate technologies. In this paper, we will specify our discussion on the research progress of high-k-metal gate and non-planar MOSFET-technologies that are suitable to 32 nm technology node and beyond.

• 出版日期2008-6
• 单位北京大学