New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

作者：Huby N^*; Tallarida G; Kutrzeba M; Ferrari S; Guziewicz E; Wachnicki L; Godlewski M

来源：Microelectronic Engineering, 2008, 85(12): 2442-2444.

DOI：10.1016/j.mee.2008.07.016

• Schottky diode
• Atomic layer deposition
• ZnO

We report on the fabrication of Schottky diodes based on n-type zinc oxide (ZnO) grown by atomic layer deposition (ALD) at low temperature (100 degrees C). These structures are suitable as selector elements in highly integrated non volatile memories based on crossbar architecture. The junctions are fully realized by optical lithography and the smallest investigated structures are 3 x 3 mu m(2) area. Several metals have been tested to single out the most suitable ohmic and Schottky contact materials. The electrical characterisation shows good Properties with a forward current above 10(4) A/cm(2) and a rectifying ratio of 10(5).

• 出版日期2008-12