摘要

The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers(op-amps)were investigated.High-and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent ef-fect.The offset voltage of both op-amps increases during long-term annealing at room temperature.However,the offset voltage decreases at elevated temperature.The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures.This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation.Moreover,the annealing of oxide trapped charges should be taken into consideration,when using elevated temperature methods to evaluate low-dose-rate damage.

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