Perylrene-based n-type field-effect transistors prepared by the neutral cluster beam deposition method

作者：Zhang Ying; Seo Hoon Seok; An Min Jun; Choi Jong Ho^*

来源：Organic Electronics, 2009, 10(5): 895-900.

DOI：10.1016/j.orgel.2009.04.017

• Neutral cluster beam deposition (NCBD)
• n-Type field-effect transistors
• N,N '-Ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)
• Hexamethyldisilazane (HMDS)
• Temperature-dependence of field-effect mobility

We present the first application of the neutral cluster beam deposition (NCBD) method to prepare n-type organic thin-film transistors with a top-contact structure based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13). Systematic analysis was carried out to examine the effects of surface passivation and thermal post-treatment on the morphology and crystallinity of P13 active layers and device performance, together with operational stability as a function of time. The high room-temperature field-effect mobility of 0.58 cm(2)/VS for the thermally post-treated devices was obtained under ambient conditions. The comparative study of the transport mechanisms responsible for conduction of the electron carriers over a temperature range of 10-300 K indicated that Surface modification and thermal post-treatment decrease total trap density and activation energy for carrier transport by reducing structural disorder.

• 出版日期2009-8