A Low-Noise 150-210 GHz Detector in 45 nm CMOS SOI

作者：Uzunkol Mehmet^*; Rebeiz Gabriel M

来源：IEEE Microwave and Wireless Components Letters, 2013, 23(6): 309-311.

DOI：10.1109/LMWC.2013.2258256

• Detector
• G-band
• imaging
• noise-equivalent-power (NEP)
• responsivity

This letter presents a G-band detector in a 45 nm silicon-on-insulator CMOS technology. The measured detector responsivity is 3 kV/W at 170-180 GHz with a 3 dB bandwidth of 150-210 GHz. The detector results in a Noise-Equivalent-Power (NEP) of 8-10 pW/Hz(1/2) at a bias current of 50-200 mu A for an IF of 10 MHz and is well matched with an input return loss > 10 dB at 167-194 GHz. The responsivity and NEP values are close to the best SiGe detectors, and show that advanced CMOS nodes are suitable for similar to 200 GHz imaging arrays.

• 出版日期2013-6