An investigation into the conversion of In2O3 into InN nanowires

作者：Papageorgiou Polina; Zervos Matthew^*; Othonos Andreas

来源：Nanoscale Research Letters, 2011, 6(1): 311.

DOI：10.1186/1556-276X-6-311

Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths >= 2 mu m have been grown on Si(001) via the wet oxidation of In at 850 degrees C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding to the body centred cubic crystal structure of In2O3 while the photoluminescence (PL) spectrum at 300 K consisted of two broad peaks, centred around 400 and 550 nm. The post-growth nitridation of In2O3 NWs was systematically investigated by varying the nitridation temperature between 500 and 900 degrees C, flow of NH3 and nitridation times between 1 and 6 h. The NWs are eliminated above 600 degrees C while long nitridation times at 500 and 600 degrees C did not result into the efficient conversion of In2O3 to InN. We find that the nitridation of In2O3 is effective by using NH3 and H-2 or a two-step temperature nitridation process using just NH3 and slower ramp rates. We discuss the nitridation mechanism and its effect on the PL.

• 出版日期2011-4-7