Drain current model including velocity saturation for symmetric double-gate MOSFETs

作者：Hariharan Venkatnarayan^*; Vasi Juzer; Rao V Ramgopal

来源：IEEE Transactions on Electron Devices, 2008, 55(8): 2173-2180.

DOI：10.1109/TED.2008.926745

• current
• double-gate MOSFET (DGFET)
• mobility
• modeling
• MOSFETs
• velocity saturation

A drain current model is developed for a symmetrically driven undoped (or lightly doped) symmetric double-gate MOSFET (SDGFET) under the drift-diffusion transport mechanism, with velocity saturation effects being included as an integral part of the model derivation. Velocity saturation effects are modeled by using the Caughey-Thomas engineering model with exponent n = 2.I(d)-V(d), I(d)-V(g), g(m)-V(g), and g(DS)-V(d) comparisons are made with 2-D device simulation results, and a very good match is found all the way from subthreshold to strong inversion. Gummel symmetry compliance is also shown.

• 出版日期2008-8