Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

作者：Biolek Zdenek^*; Biolek Dalibor; Biolkova Viera

来源：Radioengineering, 2013, 22(1): 132-135.

• Memory element
• memristor
• pinched hysteresis loop

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.

• 出版日期2013-4