A printing technology combining screen-printing with a wet-etching process for the gate electrodes of organic thin film transistors on a plastic substrate

作者：Lee Mi Young; Lee Myung Won; Park Ji Eun; Park Jong Seung; Song Chung Kun^*

来源：Microelectronic Engineering, 2010, 87(10): 1922-1926.

DOI：10.1016/j.mee.2009.11.073

• Organic thin film transistor (OTFT)
• Screen-printing
• Wet-etching
• Nano-silver ink
• Gate electrode

We have developed a practical printing technology for the gate electrode of organic thin film transistors (OTFTs) by combining screen-printing with a wet-etching process using nano-silver (Ag) ink as a conducting material. An Ag film was deposited onto a PVP (polyvinylphenol)-coated PC (polycarbonate) plastic substrate by screen-printing with nano-Ag ink, where Ag content of 20 wt.% was mixed using a terpineol solvent. Subsequently, the film was cured at 200 degrees C for 60 min, and then finally wet-etched through patterned positive photo-resist masks. The screen-printed Ag electrode exhibited a minimum line width of similar to 5 mu m, a thickness of similar to 65 nm, and a resistivity of similar to 10(-6) Omega cm, producing good geometrical and electrical characteristics for a gate electrode. Additionally, it also provided good step coverage with the PVP dielectric layer, and consequently leakage current between the gate and source/drain electrodes was eliminated. Moreover, the electrical characteristic of the screen-printed Ag electrode was not significantly changed even after a bending test in which the Ag electrodes were bent with a bending radius of 6 mm and 2500 iterations of cyclic bending. OTFTs with the screen-printed Ag electrode produced a saturation mobility of 0.13 cm(2)/Vs and a current on/off ratio of 1.79 x 10(6), being comparable to those of an OTFT with a thermally evaporated Al gate electrode.

• 出版日期2010-10