Assembly of Patterned Graphene Film Aided by Wetting/Nonwetting Surface on Liquid Interface

作者：Wang, Zhuo^*; Yang, Xuesong; Chen, Maggie Yihong

来源：IEEE Transactions on Nanotechnology, 2014, 13(3): 589-593.

DOI：10.1109/TNANO.2014.2312951

• Field effect transistor (FET)
• graphene
• interfacial tension
• wetting/nonwetting

This paper demonstrates a methodology for preparing patterned graphene films through the destabilization of dispersed graphene in N-methyl-pyrrolidone (NMP) by addition of water, which causes the graphene to be trapped at the interface of NMP/hexane. The trapped graphene film is transferred onto the patterned wetting/nonwetting surface through dip-coating process. The quality of graphene film is studied by scanning electron microscopy and atomic force microscopy. The sheet resistance of graphene film is 1.49 x 10(2) k Omega/square with surface coverage of 70% measured by the four-probe method. Field effect transistor based on such patterned graphene film is then fabricated. The current on/off ratio of devices is 1.24 with field-effect hole mobility of 159 cm(2)/Vs.

• 出版日期2014-5
• 单位长安大学