Fabrication of branched beta-Ga2O3 nanowires by post deposition annealing with Au seeds

作者：Lee Su Yong; Lee Miseon; Kang Hyon Chol^*

来源：Japanese Journal of Applied Physics, 2016, 55(9): 095002.

DOI：10.7567/JJAP.55.095002

We report the fabrication of branched beta-Ga2O3 nanowires (NWs) by a post deposition-annealing process of host beta-Ga2O3 NWs with Au catalyst seeds. The host beta-Ga2O3 NWs grown by powder sputtering were decorated by Au thin films and then annealed at temperatures greater than 800 degrees C in vacuum, oxygen, and nitrogen atmospheres. No significant morphological changes were observed in the samples annealed under the oxygen atmosphere, while the dissociation of Ga2O3 into Ga and O species occurred in the samples annealed in vacuum and nitrogen atmosphere. In the case of annealing under the nitrogen atmosphere, however, branched beta-Ga2O3 NWs were formed through a vapor-liquid-solid process with Au seeds, indicating that nitrogen atmosphere facilitates the supersaturation of Ga and O vapors into catalytic Au seeds. We observed that the photoluminescence peak intensity of branched NWs was increased by a factor of 20 compared with that of the host NWs. The peak position was also shifted from similar to 500 to similar to 640 nm.

• 出版日期2016-9