A 1.2 mV ripple, 4.5 V charge pump using controllable pumping current technology

作者:Huang, Cece; Wang, Yu; Chen, Teng; Fu, Liyin; Wang, Qi; Huo, Zongliang*
来源:IEICE Electronics Express, 2017, 14(18): 20170699.
DOI:10.1587/elex.14.20170699

摘要

This paper represents a 4.5V regulated charge pump with extremely small ripple. The pump designed with Voltage Doubler (VD) significantly reduces the output ripple voltage. In addition, this circuit utilizes a controllable pumping current (CPC) technology, which achieves automatically adjusting output current by feedback mechanism and resizing transfer transistors. The proposed charge pump has been demonstrated in 0.32 mu m 3D NAND periphery technology under 3V power supply. Simulation results show that the output ripple voltage is 1.2mV at 5mA load current with 0.1 mu F load capacitance. The maximum current drivability and power efficiency is 8mA and 81% respectively.