摘要
We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O-3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (V-OC) and short circuit current (J(SC)) were found to be similar to 0.022V and similar to 650 mu A/cm(2), respectively after positive poling, whereas significant difference in V-OC similar to 0.018V and J(SC) similar to 700 mu A/cm(2) was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field.
- 出版日期2014-10-27