Microstructures and electrical properties of copper oxide doped terbium oxide ceramics

作者:Gan Yingjie*; Wang Yu; Dong Xiang; Dong Liang
来源:Journal of Materials Science: Materials in Electronics , 2014, 25(9): 4115-4121.
DOI:10.1007/s10854-014-2137-2

摘要

The effects of copper oxide (CuO) on the microstructure and electric properties of nonstoichiometric compound terbium dioxide (Tb4O7) ceramics were investigated. Results included a reduction in the sintering temperature to 1,100 A degrees C, a grain size of 4.2 mu m, and a density of 96.2 %, which are larger than the values in previous investigation for Tb4O7 ceramics (grain sizes between 0.4 and 1.0 A mu m). Among the sintered ceramics, the sample doped with 10.0 wt% CuO showed the maximum nonlinear coefficient alpha = 43.5, which is obviously greater than alpha = 3.03 of the pure sample. Doping with 10.0 wt% CuO also exhibited nonlinearity alpha = 2.14 even at 1,123 K. In addition, the impedance spectra of the sample doped with 5.0 mol% CuO showed the largest grain boundary semicircle; 0 and 20 % samples showed both inductive and capacitive reactance.

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