An Wideband GaN Low Noise Amplifier in a 3x3 mm(2) Quad Flat Non-leaded Package

作者：Park Hyun Woo^*; Ham Sun Jun; Lai Ngoc Duy Hien; Kim Nam Yoon; Kim Chang Woo; Yoon Sang Woong

来源：Journal of Semiconductor Technology and Science, 2015, 15(2): 301-306.

DOI：10.5573/JSTS.2015.15.2.301

• GaN
• inductive peaking
• low noise amplifier (LNA)
• quad flat non-leaded (QFN) package
• resistive feedback
• source degeneration

0 An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a 0.25 mu m GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the 3x3-mm(2) QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses (S-11 and S-22) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is 1.1x0.9 mm(2). To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• 出版日期2015-4